Negative Differential Resistance in Carbon-Based Nanostructures

Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous circuits, including memristors. Several physical origins have been proposed to lead the NDR phenomena semiconductor devices over last more than half a century. Here, we report behavior formation randomly oriented graphenelike nanostructures up 37 K and high on-current density ${10}^{5}\phantom{\rule{0.25em}{0ex}}\mathrm{A}/{\mathrm{cm}}^{2}$. Our modeling of current-voltage characteristics, self-heating effects, suggests that strong temperature dependence low-bias is responsible for nonlinear behavior. findings open opportunities practical realization on-demand two- three-dimensional material-based via heat management conducting films underlying substrates.